| PART |
Description |
Maker |
| CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
| FDZ2554P |
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench
|
FAIRCHILD[Fairchild Semiconductor]
|
| BAV70LT1 |
Monolithic Dual Switching Diode Common Cathode
|
Leshan Radio Company
|
| BAW56LT1 |
Monolithic Dual Switching Diode Common Anode
|
Leshan Radio Company
|
| MMQA13VT MMQA27VT MMQA27VT1G MMQA5V6T1G MMQA12VT M |
Transient Voltage Suppressors for ESD Protection
SC-74 Quad Monolithic Common Anode
MMQA, SZMMQA Quad Common Anode Series
SC?4 QUAD TRANSIENT VOLTAGE SUPPRESSOR 24 WATTS PEAK POWER 5.6 ?33 VOLTS
|
ON Semiconductor
|
| FDMC3300NZA_07 FDMC3300NZA |
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench㈢ MOSFET 20V, 8A, 26mヘ
|
FAIRCHILD[Fairchild Semiconductor]
|
| ENA1055 |
Schottky Barrier Diode, 30V, 1A, Low IR, Non-Monolithic Dual CPH5 Common Cathode
|
ON Semiconductor
|
| ENA1379 |
Schottky Barrier Diode, 30V, 2A, Low IR, Non-Monolithic Dual EMH8 Common Cathode
|
ON Semiconductor
|
| SBE805-S-TL-E SBE805-TL-E |
Schottky Barrier Diode 30V, 0.5A, Low IR, Non-Monolithic Dual CPH5 Common Cathode
|
ON Semiconductor
|
| BAV70LT1 ON0132 |
CASE 318-08, STYLE 9 SOT-23 (TO-236AB)
From old datasheet system
Monolithic Dual Switching Diode Common Cathode
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| EMC2DXV5T5G EMC4DXV5T1 EMC4DXV5T1G EMC4DXV5T5 EMC4 |
Dual Common Base-Collector Bias Resistor Transistors(双共基极-集电极偏置电阻晶体管) 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
Dual Common Base−Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ONSEMI[ON Semiconductor]
|
| A22N-PENC-1 A22N-MENC-1 A22N-MENC-16 A22N-MENC-12 |
The Following Pages Provide Information Common To Each Model of The A22/M22 Pushbutton Switch
Specifications Common to All
Specifications Common to All
|
Omron Electronics LLC
|
